蚀刻(微加工)
大气压力
微电子机械系统
微波食品加热
分析化学(期刊)
激发态
等离子体
材料科学
傅里叶变换红外光谱
反应离子刻蚀
表面微加工
光电子学
等离子体刻蚀
光谱学
化学
光学
原子物理学
纳米技术
制作
替代医学
图层(电子)
病理
地质学
物理
海洋学
医学
量子力学
色谱法
作者
Kōji Yamakawa,Masaru Hori,Toshio Goto,Shoji Den,Toshirou Katagiri,Hiroyuki Kano
摘要
Etching of a SiO2 film [Boro-phospho silicate glass (BPSG)] has been performed in a continuous-wave microwave-excited nonequilibrium atmospheric pressure plasma using a microgap discharge. A NF3∕He gas mixture with added H2O was employed as the feed gas. An ultrahigh etch rate for SiO2 (BPSG) of 14μm∕min and an ultrahigh selectivity over Si(SiO2∕Si) of 200 was obtained. A mechanism for the selective etching is proposed based on results obtained using Fourier transform infrared spectroscopy and spatially imaged optical emission spectroscopy with an intensified charge-coupled device camera. This process could offer a breakthrough for ultrahigh-speed, damage-free micromachining of SiO2 in microelectromechanical system devices.
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