材料科学
红外线的
薄膜
费米能级
态密度
反向光电发射光谱
谱线
金属-绝缘体过渡
红外光谱学
光电发射光谱学
分析化学(期刊)
相变
凝聚态物理
角分辨光电子能谱
化学
电子结构
光学
电子
金属
物理
纳米技术
有机化学
量子力学
冶金
色谱法
天文
作者
Dmitry Ruzmetov,Kevin T. Zawilski,Sanjaya D. Senanayake,V. Narayanamurti,Shriram Ramanathan
标识
DOI:10.1088/0953-8984/20/46/465204
摘要
Optical properties and valence band density of states near the Fermi level of high-quality VO(2) thin films have been investigated by mid-infrared reflectometry and hard-UV (hν = 150 eV) photoemission spectroscopy. An exceptionally large change in reflectance from 2 to 94% is found upon the thermally driven metal-insulator transition (MIT). The infrared dispersion spectra of the reflectance across the MIT are presented and evidence for the percolative nature of the MIT is pointed out. The discrepancy between the MIT temperatures defined from the electrical and optical properties is found and its origin is discussed. The manifestation of the MIT is observed in the photoemission spectra of the V 3d levels. The analysis of the changes of the V 3d density of states is done and the top valence band shift upon the MIT is measured to be 0.6 eV.
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