氯硅烷
反应速率
化学气相沉积
硅
化学工程
化学
化学反应
薄膜
反应机理
电化学
速率方程
化学动力学
无机化学
材料科学
纳米技术
催化作用
动力学
物理化学
电极
有机化学
物理
量子力学
工程类
作者
Suguru Noda,Katsuaki Tanabe,Takashi Yahiro,Toshio Osawa,Hiroshi Komiyama
出处
期刊:Journal of The Electrochemical Society
[The Electrochemical Society]
日期:2004-01-01
卷期号:151 (6): C399-C399
被引量:14
摘要
We propose a chemical vapor deposition (CVD) process with closed gas recycling for making low-cost, crystalline silicon thin films for solar cells, which connects chlorosilane synthesis from Si and HCl with Si thin-film growth by CVD from chlorosilanes. In this work we studied the formation of chlorosilanes by the reaction of Si with HCl at temperatures ranging from 623 to 723 K. The reaction rate is time dependent, and many pores are formed on the surface of particles after reaction. These pores are active sites for chemical reactions, and the reaction rates increase with increasing pore area. The rate can be correlated with the conversion ratio of Si, and the temporal evolution of the reaction rate can be explained by a reaction model called the shrinking-core model with growing pores. By using this model, we estimated the reaction rates per unit area of activated surfaces and converted them into a rate equation that can be used for the reactor design. The incubation time of the reaction can be shortened by pretreating the Si particles in a fluidized bed, which probably creates defects in the native oxide layers on the particles, which in turn become reactive sites. © 2004 The Electrochemical Society. All rights reserved.
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