镧系元素
余辉
发光
离子
带隙
兴奋剂
热释光
材料科学
电子顺磁共振
红外线的
荧光粉
光致发光
分析化学(期刊)
化学
光电子学
核磁共振
物理
光学
天文
有机化学
色谱法
伽马射线暴
作者
Danjie Dai,Zhijun Wang,Li Zhang,Xiaotong Li,Xing Zhang,Chunjiao Liu,Dawei Wang,Jinxin Zhao,Hao Suo,Panlai Li
出处
期刊:ACS applied electronic materials
[American Chemical Society]
日期:2021-02-12
卷期号:3 (2): 963-972
被引量:9
标识
DOI:10.1021/acsaelm.0c01054
摘要
Enhancing the afterglow performance is vital for the near-infrared long persistent luminescence (NIR LPL) material field. Herein, a series of Cr3+–Ln3+ codoped near-infrared long persistent luminescence phosphors Mg2.85Li0.3Ga1.99–xLnxGeO8:0.01Cr3+ (Ln = Pr, Eu, Dy, Tm, Yb, Sm) are studied to optimize their performance. Interestingly, excellent afterglow properties can be obtained even if the lanthanide ions located outside the band gap are codoped. Also, this afterglow duration of Mg2.85Li0.3Ga1.99–xGeO8:0.01Cr3+,xEu3+/Pr3+ can be more than 24 h. We analyze the position of the lanthanide ions relative to band gap based on the establishment of the band gap energy level model. Thermoluminescence (TL) experiments demonstrate that the distribution of traps is different after doping different lanthanide ions. This is consistent with the results of electron spin resonance (ESR) spectroscopy. Our work proves that the shallow defect density has been greatly improved resulting from the strong distortion of the unit cell via doping lanthanide ions located outside the band gap and that the abundant 4f levels of the lanthanide ions located inside the band gap can complement the deeper defects in the material.
科研通智能强力驱动
Strongly Powered by AbleSci AI