神经形态工程学
铁电性
材料科学
范德瓦尔斯力
记忆电阻器
平面的
光电子学
肖特基势垒
纳米技术
凝聚态物理
计算机科学
电子工程
物理
电介质
计算机图形学(图像)
工程类
机器学习
二极管
量子力学
人工神经网络
分子
标识
DOI:10.1002/adfm.202009999
摘要
Abstract Ferroelectric memristors represent a promising new generation of devices that have a wide range of applications in memory, digital information processing, and neuromorphic computing. Recently, van der Waals ferroelectric In 2 Se 3 with unique interlinked out‐of‐plane and in‐plane polarizations has enabled multidirectional resistance switching, providing unprecedented flexibility in planar and vertical device integrations. However, the operating mechanisms of these devices have remained unclear. Here, through the demonstration of van der Waals In 2 Se 3 ‐based planar ferroelectric memristors with the device resistance continuously tunable over three orders of magnitude, and by correlating device resistance states, ferroelectric domain configurations, and surface electric potential, the studies reveal that the resistive switching is controlled by the multidomain formations and the associated energy barriers between domains, as opposed to the commonly assumed Schottky barrier modulations at the metal‐ferroelectric interface. The findings reveal new device physics through elucidating the microscopic operating mechanisms of this new generation of devices, and provide a critical guide for future device development and integration efforts.
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