材料科学
可靠性(半导体)
MOSFET
功率MOSFET
光电子学
宽禁带半导体
碳化硅
二极管
功率半导体器件
电压
阈值电压
电气工程
电子工程
功率(物理)
工程物理
晶体管
工程类
复合材料
物理
量子力学
作者
Brett Hull,Scott T. Allen,Q. Zhang,D. A. Gajewski,Vipindas Pala,Jim Richmond,Sei‐Hyung Ryu,Michael O’Loughlin,Edward Van Brunt,Lin Cheng,Albert A. Burk,Jeff B. Casady,David Grider,John W. Palmour
标识
DOI:10.1109/wipda.2014.6964641
摘要
In this paper, we present reliability and stability data based on a large body of data accumulated from high volume production of SiC power MOSFETs. The SiC MOSFETs (Gen2, C2M) showed excellent body diode and threshold voltage stability after 1000 hours of accelerated stressing tests. Results from next generation SiC power MOSFET development efforts are also presented. A significant reduction in specific on-resistance was demonstrated, and a wide range of blocking voltages, from 900 V to 15 kV, has also been demonstrated.
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