Near-Infrared Lasing from Small-Molecule Organic Hemispheres

激光阈值 激子 光电子学 光致发光 化学 激光器 人口倒转 有机半导体 近红外光谱 半导体 发光 材料科学 波长 光学 物理 量子力学
作者
Xuedong Wang,Qing Liao,Hui Li,Shuming Bai,Yishi Wu,Xiaomei Lü,Huaiyuan Hu,Qiang Shi,Hongbing Fu
出处
期刊:Journal of the American Chemical Society [American Chemical Society]
卷期号:137 (29): 9289-9295 被引量:143
标识
DOI:10.1021/jacs.5b03051
摘要

Near-infrared (NIR) lasers are key components for applications, such as telecommunication, spectroscopy, display, and biomedical tissue imaging. Inorganic III-V semiconductor (GaAs) NIR lasers have achieved great successes but require expensive and sophisticated device fabrication techniques. Organic semiconductors exhibit chemically tunable optoelectronic properties together with self-assembling features that are well suitable for low-temperature solution processing. Major blocks in realizing NIR organic lasing include low stimulated emission of narrow-bandgap molecules due to fast nonradiative decay and exciton-exciton annihilation, which is considered as a main loss channel of population inversion for organic lasers under high carrier densities. Here we designed and synthesized the small organic molecule (E)-3-(4-(di-p-tolylamino)phenyl)-1-(1-hydroxynaphthalen-2-yl)prop-2-en-1-one (DPHP) with amphiphilic nature, which elaborately self-assembles into micrometer-sized hemispheres that simultaneously serves as the NIR emission medium with a photoluminescence quantum efficiency of ∼15.2%, and the high-Q (∼1.4 × 10(3)) whispering gallery mode microcavity. Moreover, the radiative rate of DPHP hemispheres is enhanced up to ∼1.98 × 10(9) s(-1) on account of the exciton-vibrational coupling in the solid state with the J-type molecular-coupling component, and meanwhile the exciton-exciton annihilation process is eliminated. As a result, NIR lasing with a low threshold of ∼610 nJ/cm(2) is achieved in the single DPHP hemisphere at room temperature. Our demonstration is a major step toward incorporating the organic coherent light sources into the compact optoelectronic devices at NIR wavelengths.

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