Comprehensive Physics Based TCAD Model for 2D MX2 Channel Transistors

For the first time, a comprehensive TCAD model is developed to unambiguously extract key device parameters: contact resistance (R c ), channel mobility (μ CH ), Schottky barrier height (SBH), & D it from experimental data on back-gate (BG) transistors with MX 2 channel. The model is tested and validated against three different data sets with different contact metal, quality of channel, contact, and interfaces. Using model's output, we analyze the accuracy of R c and μ CH extracted by the TLM method and provide guidance on the limits of its applicability. Finally, the model is used to project contact requirements (SBH ~ 0eV, high doping density >2e13cm ^-2 ) for performant, scaled transistors with 2D material channel in stacked nanosheet configuration.