德拉姆
动态随机存取存储器
晶体管
材料科学
计算机科学
CMOS芯片
半导体
通用存储器
纳米技术
硅
光电子学
嵌入式系统
电气工程
工程类
半导体存储器
计算机硬件
内存管理
电压
交错存储器
作者
Jae Seok Hur,Sungsoo Lee,Ji‐Won Moon,Hanggyo Jung,Jongwook Jeon,Seong Hun Yoon,Jin‐Hong Park,Jae Kyeong Jeong
出处
期刊:Nanoscale horizons
[The Royal Society of Chemistry]
日期:2024-01-01
卷期号:9 (6): 934-945
摘要
As the downscaling of conventional dynamic random-access memory (DRAM) has reached its limits, 3D DRAM has been proposed as a next-generation DRAM cell architecture. However, incorporating silicon into 3D DRAM technology faces various challenges in securing cost-effective high cell transistor performance. Therefore, many researchers are exploring the application of next-generation semiconductor materials, such as transition oxide semiconductors (OSs) and metal dichalcogenides (TMDs), to address these challenges and to realize 3D DRAM. This study provides an overview of the proposed structures for 3D DRAM, compares the characteristics of OSs and TMDs, and discusses the feasibility of employing the OSs and TMDs as the channel material for 3D DRAM. Furthermore, we review recent progress in 3D DRAM using the OSs, discussing their potential to overcome challenges in silicon-based approaches.
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