铁电性
材料科学
非易失性存储器
神经形态工程学
纳米技术
光电子学
半导体
工程物理
极化(电化学)
范德瓦尔斯力
电介质
计算机科学
物理
化学
物理化学
量子力学
机器学习
分子
人工神经网络
作者
Zusen Fan,Jingyuan Qu,Tao Wang,Yanwei Wen,Zhengce An,Qitao Jiang,Wei Xue,Peng Zhou,Xin Xu
标识
DOI:10.1088/1674-1056/ad08a4
摘要
Ferroelectrics are a type of material with a polar structure and their polarization direction can be inverted reversibly by applying an electric field. They have attracted tremendous attention for their extensive applications in non-volatile memory, sensors and neuromorphic computing. However, conventional ferroelectric materials face insulating and interfacial issues in the commercialization process. In contrast, two-dimensional (2D) ferroelectric materials usually have excellent semiconductor performance, clean van der Waals interfaces and robust ferroelectric order in atom-thick layers, and hold greater promise for constructing multifunctional ferroelectric optoelectronic devices and nondestructive ultra-high-density memory. Recently, 2D ferroelectrics have obtained impressive breakthroughs, showing overwhelming superiority. Herein, firstly, the progress of experimental research on 2D ferroelectric materials is reviewed. Then, the preparation of 2D ferroelectric devices and their applications are discussed. Finally, the future development trend of 2D ferroelectrics is looked at.
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