Attaining inhibition of sneak current and versatile logic operations in a singular halide perovskite memristive device by introducing appropriate interface barriers

Emerging resistive switching devices hold the potential to realize densely packed passive nanocrossbar arrays, suitable for deployment as random access memory devices (ReRAMs) in both embedded and high-capacity storage applications. In this study, we have engineered ReRAMs comprising ITO/(UVO-treated) amorphous ZnO (a-ZnO)/MAPbI