纳米线
紫外线
材料科学
探测器
光电子学
纳米技术
光学
物理
作者
Bei Li,Zhiyu Dong,Wei Wang,Guowei Li,Xiaozhan Yang,Shuanglong Feng,Wenlin Feng,Wenqiang Lu
出处
期刊:RSC Advances
[The Royal Society of Chemistry]
日期:2024-01-01
卷期号:14 (32): 22847-22857
摘要
Ga 2 O 3 is a kind of wide-band gap semiconductor, which has great potential in deep ultraviolet detection because of its high efficiency and fast response.
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