记忆电阻器
极性(国际关系)
纳米技术
材料科学
计算机科学
化学
工程类
电气工程
生物化学
细胞
作者
Yike Xiao,Weiling Sun,Cheng Gao,Jun‐Cheng Jin,Muhammad Siraj,Pingyuan Yan,Fei Sun,Xuan Zhang,Qi Wang,Wei Huang,Chuanxiang Sheng,Yefeng Yu
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-09-30
被引量:1
标识
DOI:10.1021/acs.nanolett.4c03449
摘要
Reproducing neural functions with artificial nanofluidic systems has long been an aspirational goal for neuromorphic computing. In this study, neural functions, such as neural activation and synaptic plasticity, are successfully accomplished with a polarity-switchable nanofluidic memristor (PSNM), which is based on the anodized aluminum oxide (AAO) nanochannel array. The PSNM has unipolar memristive behavior at high electrolyte concentrations and bipolar memristive behavior at low electrolyte concentrations, which can emulate neural activation and synaptic plasticity, respectively. The mechanisms for the unipolar and bipolar memristive behaviors are related to the polyelectrolytic Wien (PEW) effect and ion accumulation/depletion effect, respectively. These findings are beneficial to the advancement of neuromorphic computing on nanofluidic platforms.
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