材料科学
光学
激光器
皮秒
放大器
光电子学
脉冲持续时间
波长
紫外线
物理
CMOS芯片
作者
Yosuke Orii,Kento Yoshii,Kenta Kohno,Hiroki Tanaka,Kimihiko Shibuya,George Okada,Yusuke Mori,Junichi Nishimae,Masashi Yoshimura
出处
期刊:Optics Express
[The Optical Society]
日期:2023-04-05
卷期号:31 (9): 14705-14705
被引量:4
摘要
We report the generation of picosecond pulsed light at a 266 nm wavelength with an average power of 53 W. We developed a picosecond pulsed 1064 nm laser source with an average power of 261 W, a repetition rate of 1 MHz, and a pulse duration of 14 ps, using a gain-switched DFB laser diode as a seed laser and a 914 nm laser-diode-pumped Nd-doped YVO4 power amplifier. We achieved stable generation of 266 nm light with an average power of 53 W from frequency quadrupling using an LBO and a CLBO crystals. The amplified power of 261 W and the 266 nm average power of 53 W from the 914 nm pumped Nd:YVO4 amplifier are the highest ever reported, to the best of our knowledge.
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