非阻塞I/O
异质结
光电二极管
材料科学
光电子学
二极管
共发射极
p-n结
半导体
化学
生物化学
催化作用
作者
Xi Wang,Li Na,Pu Hongbin,Yuli Yang,Jichao Hu,Xu Jianning
出处
期刊:Journal of physics
[IOP Publishing]
日期:2022-08-01
卷期号:2331 (1): 012002-012002
标识
DOI:10.1088/1742-6596/2331/1/012002
摘要
Abstract Numerical investigation on hole-injection characteristics of NiO/SiC heterojunction is carried out in this paper. Theory analysis and numerical simulation both indicate the excellent hole-injection characteristic of p-NiO/n-SiC heterojunction. The pn junction diode and pnp phototransistor are constructed and simulated to evaluate hole-injection characteristics p-NiO/n-SiC heterojunction. The results indicate that the p-NiO/n-SiC heterojunction shows great potential advantage in enhancing current gain of pnp phototransistor. By using NiO/SiC heterojunction as the emitter junction, the current gain of SiC based pnp phototransistor can be increased by about 96.3 times.
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