Prediction of a new two-dimensional valleytronic semiconductor MoGe2P4 with large valley spin splitting

2D MoGe 2 P 4 is predicted to be a direct bandgap semiconductor which has large valley spin splitting. Biaxial strain can regulate the transition of 2D MoGe 2 P 4 from a semiconductor to a metal. 2D MoGe 2 P 4 has excellent absorption in ultraviolet and visible light regions.