符号
猜想
像素
数学
算法
物理
离散数学
算术
光学
作者
Ming-Hsiung Wu,Zi-Liang Hsu,Cheng‐Yeu Wu
标识
DOI:10.1109/ted.2022.3209134
摘要
This article reports the active matrix (AM) 630-nm red flip-chip $960\times540$ micro-light-emitting diode (MicroLED) displays with high pixels per inch (PPI) of 1600. A novel p-side-up AlGaInP thin-film structure by a wafer-transfer technique onto the sapphire substrate is proposed to fabricate the $960\times540$ MicroLED array. In addition, the single pixel with a diameter of $10~\mu \text{m}$ on the MicroLED array exhibits excellent characteristics, including a forward voltage of 1.96 V at $17.4~\mu \text{A}$ , an extremely low leakage current of 90 fA at −10 V, and a high light output power of $94~\mu \text{W}$ at 1 mA. The highest external quantum efficiency (EQE) is 5.3% at 330 A/cm2 for the single pixel of MicroLED. The operability and lightening pixels of flip-chip bonding to AM driver IC analyzed by software image J are 80.21% and 415 808, respectively. Through flip-chip bonding technology, the $960\times540$ MicroLED display can demonstrate the high-resolution graphic and video images. It is a prospective technology for the application of augmented and virtual realities (AR and VR) and optogenetic neural stimulation.
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