费米面
剩余电阻率
凝聚态物理
超导电性
电阻率和电导率
材料科学
磁电阻
费米能级
量子振荡
德哈斯-范阿尔芬效应
锭
各向异性
物理
磁场
费米液体理论
电子
合金
光学
复合材料
量子力学
作者
Naoki Nakamura,Ayano Yanuma,Yuma Chiba,Rumi Omura,Ryuji Higashinaka,Hisatomo Harima,Yuji Aoki,Tatsuma D. Matsuda
标识
DOI:10.7566/jpsj.92.034701
摘要
We grew single crystals of α-IrSn4 and α-RhSn4 using the Sn-self flux method and those of IrGe4 using the Czochralski method in a tetra-arc furnace, together with polycrystals of RhGe4 under pressure. The obtained single crystals were found to be an enantiopure of the trigonal chiral structures with space groups P3121 (No. 152) or P3221 (No. 154), depending on the samples. Namely, one ingot belongs to P3121 and another ingot belongs to P3221. Single crystalline samples were of high quality, with residual resistivity ρ0 = 0.052 µΩ·cm and residual resistivity ratio RRR = 1250 in α-IrSn4. We confirmed bulk-superconductivity in IrGe4 and RhGe4 from the measurements of the specific heat. The present four compounds are uncompensated metals because the valence electrons are odd in number. The corresponding transverse magnetoresistance indicated saturated behaviors in high magnetic fields, while non-saturated behaviors were observed in the configuration with current \(J\parallel [11\bar{2}0]\) and magnetic field \(H\parallel [\bar{1}100]\), suggesting the existence of open orbits along the [0001] direction. To clarify the Fermi surfaces of these compounds, we conducted de Haas–van Alphen experiments, which showed that the main Fermi surface is a flat ellipsoidal Fermi surface with many arms and is split into two Fermi surfaces, reflecting the noncentrosymmetric (chiral) structure.
科研通智能强力驱动
Strongly Powered by AbleSci AI