Enhanced performance of AZO embedded Cu2O/ZnO based transparent photodetector operating at self-power mode

A photodetector is a device that converts light to electrical information corresponding to the incident photon energy that can be transformed to photogenerated carriers. This results in current flow. Herein, a transparent broad spectral photodetector with a fast response time of (0.4 ms) high responsivity (0.36 mA W−1), and detectivity (4.75 × 1010 Jones) under ultraviolet light is constructed using a metal oxide heterojunction. A transparent photodetector was fabricated using n-type ZnO and p-type Cu2O heterojunctions. Owing to the wide energy bandgap of heterojunction layers, the optically high transparency (> 50 %) was achieved to ensure the feature of see-through feature. The structural, optical, and electrical properties of Cu2O based devices were comprehensively investigated. This study aimed to improve the current and performance of a Cu2O/ZnO based device by inserting an AZO layer between ZnO and the substrate (FTO) to achieve a back surface field effect.