CMOS Directly Bonded to Array (CBA) Technology for Future 3D Flash Memory

3D stacked devices have been developed and manufactured to realize gains in power, performance, area and cost (PPAC) in various devices. In this work, CMOS directly bonded to array (CBA) technology is applied to 3D flash memory. As a result, CMOS and cell performance can be improved, and further 2D and 3D scaling can be achieved. CBA technology is essential to realize PPAC goals for future 3D flash memory.