表面等离子体激元
放大器
物理
信号(编程语言)
等离子体子
干扰(通信)
光电子学
功率(物理)
表面等离子体子
电信
计算机科学
CMOS芯片
频道(广播)
量子力学
程序设计语言
作者
Zhen Liao,Shaofei Wu,Jia Guo,Leilei Liu,Jialin Cai
标识
DOI:10.1002/admt.202301901
摘要
Abstract The advancement of communication systems demands ever‐smaller sizes, leading to the integration of more circuits in compact forms. A promising solution lies in Spoof Surface Plasmon Polaritons (SSPPs), which enable strong confinement, low interference, and a significant wave vector, thereby facilitating smaller sizes. However, the amplification of large plasmonic signals in a compact size remains a daunting scientific challenge for the further development of SSPPs communication systems. In this study, this challenge is tackled by selecting GaN High Electron Mobility Transistors (HEMTs) and load/source‐pull technologies. To ensure efficient operation, impedance‐matching networks are designed, resulting in a remarkably small amplifier structure. The approach involves utilizing the Bayesian optimization (BO) algorithm to fine‐tune the matching network, leading to exceptional amplification performance. The results obtained in the frequency range of 1–3 GHz are highly promising, with both simulated and measured results demonstrating an impressive output power exceeding 40 dBm, a power added efficiency (PAE) surpassing 60%, and a gain exceeding 10 dB. These remarkable achievements underscore the viability of amplifying large‐signal SSPPs and outputting high‐power SSPPs waves within a subwavelength size, opening exciting possibilities for SSPPs communication, sensing, and imaging systems.
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