假电容
电解质
超级电容器
电容
电容感应
兴奋剂
电化学
化学
化学工程
材料科学
纳米技术
电极
工程类
电气工程
物理化学
光电子学
作者
Zhaojin Li,Hui Wu,Di Zhang,Qiujun Wang,Huilan Sun,Qujiang Sun,Bo Wang
标识
DOI:10.1016/j.apsusc.2024.159744
摘要
O-doping is important to regulate the electrochemical behavior of activated carbon (AC) used in supercapacitors. However, the clear mechanism and relationship of O-doping on the capacitance behavior of AC seem contradictory and remain undisclosed. This is because when O-doping is carried out, it often causes changes in the physical and chemical properties such as defect state, structure, and specific surface area of AC. The superposition of these factors on capacitance behavior complicates the research problem. Here, a low-temperature oxidation method was adopted to achieve doping of different forms of O-functional groups on the AC with minimal effect on its structure and specific surface area. It can be found that the effect of O-doping on the double-layer capacitance of AC is relatively small, but positively correlated with the pseudocapacitance. This is because the functional groups C-O and COOH by O-doping can not only improve the wettability between the electrolyte and AC, but also combine with cations in the electrolyte to enhance the pseudo capacitance. The influence mechanism of O-doping on the capacitance behavior of AC has been verified in different electrode systems and aqueous electrolytes. This study provides theoretical support for rational O-doping to enhance the electrochemical performance of AC.
科研通智能强力驱动
Strongly Powered by AbleSci AI