外延
沟槽
材料科学
光电子学
MOSFET
工程物理
电气工程
纳米技术
晶体管
电压
工程类
图层（电子）
作者
Mitsuru Sometani,Kunihide Oozono,Shiyang Ji,Takehiko Tawara,Takahiro Morimoto,Tomohisa Kato,Kazutoshi Kojima,Shinsuke Harada
出处
期刊：The transactions of the Institute of Electrical Engineers of Japan.C
[Institute Electrical Engineers Japan]
日期：2024-03-01
卷期号：144 (3): 257-262
标识
DOI：10.1541/ieejeiss.144.257
摘要
We compared static and dynamic characteristics of a 1.2 kV-Class SJ-MOSFET fabricated by the multi-epitaxial growth (ME) method and the trench-filling epitaxial growth (TFE) method, which is expected to have a lower process cost. Comparably low specific on-resistance and switching losses were observed for the SJ-MOSFETs fabricated by both methods.
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