Hot‐Exciton Mechanism and AIE Effect Boost the Performance of Deep‐Red Emitters in Non‐Doped OLEDs

Luminescent materials possessing a "hot-exciton" mechanism and aggregation-induced emission (AIE) qualities are well-suited for use as emitting materials in nondoped organic light-emitting diodes (OLEDs), particularly in deep-red regions where their ground state and singlet excited state surfaces are in proximity, leading to the formation of multiple nonradiative channels. However, designing molecules that artificially combine the hot-exciton mechanism and AIE attributes remains a formidable task. In this study, a versatile strategy is presented to achieve hot-exciton fluorescence with AIE property by increasing the first singlet excited (S1 ) state through modulation of the conjugation length of the newly created acceptor unit, matching the energy level of high-lying triplet (Tn ) states, and enhancing exciton utilization efficiency by employing suitable donor moieties. This approach reduces the aggregation-caused quenching (ACQ) in the aggregate state, resulting in the proof-of-concept emitter DT-IPD, which produces an unprecedented external quantum efficiency (EQE) of 12.2% and Commission Internationale de I'Eclairage (CIE) coordinates of (0.69, 0.30) in a deep-red non-doped OLED at 685 nm, representing the highest performance among all deep-red OLEDs based on materials with hot-exciton mechanisms. This work provides novel insights into the design of more efficient hot-exciton emitters with AIE properties.