材料科学
晶体管
光电子学
薄膜晶体管
放大器
阈下传导
电子线路
噪音(视频)
香料
信号(编程语言)
电子工程
电气工程
电压
工程类
计算机科学
CMOS芯片
纳米技术
图像(数学)
图层(电子)
人工智能
程序设计语言
作者
Ritwik Vatsyayan,Shadi A. Dayeh
标识
DOI:10.1109/ted.2023.3284803
摘要
We report a new physics-based model for dual-gate amorphous-indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) which we developed and fine-tuned through experimental implementation and benchtop characterization. We fabricated and characterized a variety of test patterns, including a-IGZO TFTs with varying gate widths (100-1000 μm) and channel lengths (5-50 μm), transmission-line-measurement patterns and ground-signal-ground (GSG) radio frequency (RF) patterns. We modeled the contact resistance as a function of bias, channel area, and temperature, and captured all operating regimes, used physics-based modeling adjusted for empirical data to capture the TFT characteristics including ambipolar subthreshold currents, graded interbias-regime current changes, threshold and flat-band voltages, the interface trap density, the gate leakage currents, the noise, and the relevant small signal parameters. To design high-precision circuits for biosensing, we validated the dc, small signal, and noise characteristics of the model. We simulated and fabricated a two-stage common source amplifier circuit with a common drain output buffer and compared the measured and simulated gain and phase performance, finding an excellent fit over a frequency range spanning 10 kHz-10 MHz.
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