Study of Stress Compensation Layer for Enhancing Quantum Efficiency of InGaN/GaN-MQWs LEDs Within the Green-Gap Region

In Green-LEDs, reduced quantum efficiency is partially caused by the growth of high-indium content In x Ga 1-x N (x=25%) MQWs on GaN, resulting in significant compressive stress, defect densities, and the Quantum Confined Stark Effect. We propose a novel optimised structure by analysing two distinct Stress Compensation Layers (SCL): SCL-A (superlattice) and SCL-B (pre-layer). This optimised LED achieves a maximum internal quantum efficiency of 85%, a minimal 19 % efficiency droop at 150 A/cm ² , and a desirable 28 nm red-shift in photoluminescence with a 21.4 nm FWHM, all without affecting green emission.