记忆电阻器
钙钛矿(结构)
纳米技术
材料科学
计算机科学
卤化物
电子工程
工程类
化学
无机化学
化学工程
作者
Bowen Jiang,Xiang Chen,Xiaoxin Pan,Tao Li,Yuelong Huang,Jiahao Tang,Xiaoqing Li,Peixiong Wang,Guokun Ma,Jun Zhang,Hao Wang
标识
DOI:10.1002/advs.202409291
摘要
The memristor has recently demonstrated considerable potential in the field of large-scale data information processing. Metal halide perovskites (MHPs) have emerged as the leading contenders for memristors due to their sensitive optoelectronic response, low power consumption, and ability to be prepared at low temperatures. This work presents a comprehensive enumeration and analysis of the predominant research advancements in mechanisms of resistance switch (RS) behaviors in MHPs-based memristors, along with a summary of useful characterization techniques. The impact of diverse optimization techniques on the functionality of perovskite memristors is examined and synthesized. Additionally, the potential of MHPs memristors in data processing, physical encryption devices, artificial synapses, and brain-like computing advancement of MHPs memristors is evaluated. This review can prove a valuable reference point for the future development of perovskite memristors applications. In conclusion, the current challenges and prospects of MHPs-based memristors are discussed in order to provide insights into potential avenues for the development of next-generation information storage technologies and biomimetic applications.
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