Source Material Design for Realizing >50% Indium-Saving Transparent Electrode toward Sustainable Development of Silicon Heterojunction Solar Cells

材料科学 X射线光电子能谱 铟 光电子学 异质结 氧化铟锡 薄脆饼 太阳能电池 无定形固体 硅 电子迁移率 纳米技术 薄膜 化学工程 工程类 有机化学 化学
作者
Zhongyu Gao,Chengliang Han,Jiejun Pan,Jiajun Shen,Zhibin Liu,Kaixuan Chen,Zhikai Yi,Yong Zhang,Yu Zhong,Xianjie Zhou,Pingqi Gao
出处
期刊:ACS Applied Materials & Interfaces [American Chemical Society]
卷期号:17 (2): 3265-3277 被引量:8
标识
DOI:10.1021/acsami.4c15684
摘要

Indium (In) reduction is a hot topic in transparent conductive oxide (TCO) research. So far, most strategies have been focused on reducing the layer thickness of In-based TCO films and exploring In-free TCOs. However, no promising industrial solution has been obtained yet. In our work, we adopt the emerging reactive plasma deposition (RPD) approach and provide our In-reduced solution by directly reducing the In content from the source material. We designed the indium zinc oxide (IZO) target with a composition of Zn 3 In 2 O 6 (i.e., (ZnO) 3 ·In 2 O 3 ). Density functional theory (DFT) calculation shows that the introduction of a large amount of ZnO significantly perturbs the conduction band of the In 2 O 3 host, resulting in a limitation of exploring high-mobility IZO films. For TCOs used in solar cell application, low resistivity with high carrier mobility is required. Via RPD process optimization, we obtained the minimal resistivity value of 6.08 × 10 –4 Ω·cm, which is comparable to our lab-standard tin-doped indium oxide (ITO) film. The corresponding electron mobility and carrier concentration are 31 cm 2 V –1 s –1 and 3.37 × 10 20 cm –3, respectively. Our IZO film is in an amorphous state. The optical band gap is ∼3.6 eV. X-ray photoelectron spectroscopy (XPS) data show that the film composition is In:Zn:O = 21.60:28.75:49.65 (at. %). Damp heat tests show strong stability of our IZO film, and no aging effects have been observed. Furthermore, we demonstrated wafer-scale silicon heterojunction (SHJ) solar cells with IZO films. As compared with our reference hydrogenated cerium-doped indium oxide (ICO)-based solar cells, the IZO-based devices show even higher fill factor parameters. Our amorphous state stable In-reduced IZO film could find versatile application in the sustainable development of temperature-sensitive devices such as SHJ and perovskite/silicon tandem solar cells, as well as flexible OLEDs.
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