Robust Light Detection from Ultraviolet to Near‐Infrared with ZnGa2O4/p‐Si Heterojunction Photodiode and Its Application for Optoelectronic Physically Unclonable Functions (Adv. Electron. Mater. 11/2024)

Robust Light Detection with Broadband ZnGa2O4/p-Si Heterojunction Photodiode for Physically Unclonable Functions In article number 2400649, Hocheon Yoo and co-workers demonstrate broadband detection performance by applying a UV-responsive ZnGa2O4 film with a low refractive index on p-Si. The device exhibited stability in various environments, benefiting from the chemical robustness of ZnGa2O4. By introducing different self-assembled monolayers to induce irregular doping, the research team enabled multi-key generation through a combination of voltage and wavelength.