量子隧道
三元运算
香料
光电子学
电子工程
逻辑门
隧道场效应晶体管
材料科学
偏压
神经形态工程学
电流(流体)
电子线路
场效应晶体管
晶体管
电气工程
电压
工程类
计算机科学
人工神经网络
机器学习
程序设计语言
作者
Zhijun Lv,Hongliang Lü,Chen Liu,Yuming Zhang,Yimen Zhang,Yi Zhu,Jiale Sun,Bin Lu,Ziji Jia,Mengqing Zhao
标识
DOI:10.1109/ted.2022.3195474
摘要
Gate–source overlap tunneling FETs (GSO-TFETs) as a novel ternary device are very promising in low-power neuromorphic circuits. In this article, an accurate potential model of the ternary GSO-TFETs is presented for the face-tunnel region considering the quasi-mobile charges (QMCs) based on the analysis of the face-tunnel mechanism. Then a potential-based analytical current model is developed for the first time to predict the face-tunnel process and line-tunnel current simultaneously with both the gate and the drain modulations. The modeling results are validated with TCAD simulations and good agreement within a wide biasing range is achieved, which indicates the great potential of this SPICE-friendly model for the tunneling-based ternary device in the commercial IC design fields.
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