太赫兹辐射
超短脉冲
石墨烯
材料科学
吸收(声学)
光电子学
调制(音乐)
薄膜
相(物质)
太赫兹光谱与技术
光学
超快激光光谱学
相位调制
纳米技术
激光器
相位噪声
物理
量子力学
声学
复合材料
作者
Anastasios D. Koulouklidis,Anna C. Tasolamprou,Spyros Doukas,Eudokia Kyriakou,M. Said Ergoktas,Christina Daskalaki,E. N. Economou,Coşkun Kocabaş,Elefterios Lidorikis,Maria Kafesaki,Stelios Tzortzakis
出处
期刊:ACS Photonics
[American Chemical Society]
日期:2022-09-08
卷期号:9 (9): 3075-3082
被引量:15
标识
DOI:10.1021/acsphotonics.2c00828
摘要
Interaction of intense terahertz (THz) waves with graphene based modulation devices holds great potential for the optoelectronic applications of the future. Here, we present a thin film graphene-based THz perfect absorbing device whose absorption and phase characteristics can be modulated through THz self-actions in the subps time scale. The device consists of a single-layer graphene placed on an ionic liquid substrate, back-plated by a metallic back-reflector, with the graphene doping level mediated through electrostatic gating. We experimentally record an absorption modulation of more than 3 orders of magnitude from the initial perfect absorption state, when the device is illuminated with THz field strengths in the range of 102 to 654 kV/cm. Furthermore, an absolute phase modulation of 130° is recorded. Detailed theoretical analysis indicates that the origin of the THz nonlinear response is the THz-induced heating of the graphene's carriers that leads to a reduction of its conductivity and, consequently, to reduced absorption of the THz radiation. Our analysis also maps the temporal dynamics of the THz-induced temperature elevation of the graphene's carriers, illustrating the ultrafast, subps nature of the overall process. These results can find applications in future dynamically controlled flat optics and spatiotemporal shaping of intense THz electric fields.
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