材料科学
光电子学
石墨烯
发光二极管
图层(电子)
缓冲器(光纤)
二极管
紫外线
蓝宝石
消散
基质(水族馆)
散热片
光学
复合材料
纳米技术
激光器
地质学
工程类
物理
电气工程
海洋学
热力学
电信
计算机科学
作者
Haina Ci,Hongliang Chang,Ruoyu Wang,Tongbo Wei,Yunyu Wang,Zhaolong Chen,Yukui Zhang,Zhipeng Dou,Zhiqiang Liu,Jinmin Li,Peng Gao,Zhongfan Liu
标识
DOI:10.1002/adma.201970211
摘要
The use of vertically oriented graphene nanowalls as a buffer layer for the growth of high-quality AlN film on a sapphire substrate to improve heat dissipation is proposed by Tongbo Wei, Zhiqiang Liu, Peng Gao, Zhongfan Liu, and co-workers in article number 1901624. Thus, their as-fabricated light-emitting diode shows a 37% increasement of light output power under a high injection current (350 mA) due to the temperature reduction and strain relaxation.
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