中间层
材料科学
基质(水族馆)
电镀(地质)
导电体
生产线后端
图层(电子)
光电子学
电子包装
微电子机械系统
互连
复合材料
计算机科学
电信
蚀刻(微加工)
地质学
海洋学
地球物理学
作者
Charles G. Woychik,John M. Lauffer,David Bajkowski,Michael Gaige,Robert Edwards,Gordon Benninger,William Wilson
出处
期刊:IMAPS symposia and conferences
[IMAPS - International Microelectronics Assembly and Packaging Society]
日期:2018-10-01
卷期号:2018 (1): 000264-000269
被引量:3
标识
DOI:10.4071/2380-4505-2018.1.000264
摘要
Abstract In recent years new applications for RF and MEMS devices require the insulating properties of glass. In order to realize these applications using a glass substrate, it becomes necessary to be able to deposit a metalized layer on both surfaces as well as create vias through the glass substrate. In this paper we will present results of glass interposers that have fine line circuitry on both sides of the substrate and that have through glass vias (TGVs). One major challenge is creating TGVs, using either electrically conductive adhesives (ECAs) or Cu plating methods, to achieve high conductivity and reliable via connections. In addition, it is important to have the capability to produce fine line metallization on the surface of the glass substrate. We employ a semi-additive plating (SAP) method to produce the fine line metallization. The combination of a robust process to create a TGV and the ability to use SAP to do fine line circuitry are the fundamental building blocks to generate advanced carriers for these new future electronic packaging applications.
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