Modelling of SiC Power MOSFET in Matlab, Simulink, and LTSpice

SiC power MOSFETs are an integral component of many electrical designs. At present, such designs are validated using various software tools such as Cadence and PSPICE. However, this paper proposes an improved model of the SiC Power MOSFET using MATLAB. The research aims to detail the mathematical formulation of the MOSFET in MATLAB followed by simulating the same in LTSpice and Simulink. The static and dynamic characteristics of the MOSFET are studied i.e. the effect of channel length modulation and temperature followed by the switching process throughout the different time periods is simulated and explained in detail. The paper concludes with an illustration of the results of the simulations obtained and the discussion based on them.