Design of Ka band MMIC limiter low noise amplifier

A Ka band GaAs MMIC limiter low noise amplifier is presented. According to high power limiting and low noise requirements, PIN diodes and low noise PHEMT transistors are integrated in the same GaAs substrate. Finally, a high-power PIN limiter low noise amplifier integrated chip is obtained. The limiter has two-stage anti-parallel structure. The insertion loss is lower than 1.3dB, while the input and output standing wave ratio is lower than 1.5. The LNA has self-bias and parallel negative feedback structure. Simulation results indicate that the LNA has average gain 22dB, noise figure less than 2.2dB, input voltage standing wave ration less than 1.2, output voltage standing wave ration less than 2 from 33GHz to 37GHz. The integrated limiter and LNA has average gain 22dB, noise figure less than 3.5dB, input/output voltage standing wave ration less than 2 from 33GHz to 37GHz.