67‐2: Requirement of a Polyimide Substrate to Achieve High Thin‐film‐transistor Reliability

The reliability of top‐gate oxide thin‐film‐transistors on a polyimide substrate correlates with the volume resistivity of the polyimide substrate. Hence, the polyimide used as a TFT substrate should have a high resistivity of 3×10 17 ohm‐cm or more to ensure high TFT reliability equal to the TFT on a glass substrate.