光电探测器
光电导性
异质结
光电子学
范德瓦尔斯力
材料科学
半导体
光电效应
光伏系统
石墨烯
物理
纳米技术
电气工程
分子
量子力学
工程类
作者
Zhenyu Yang,Bei Jiang,Zhijie Zhang,Zhongzheng Wang,Xiaobo He,Da Wan,Xuming Zou,Xingqiang Liu,Lei Liao,Fukai Shan
摘要
Although plenty of two-dimensional (2D) semiconductor heterostructure photodetectors have been studied, there is still a lack of systematic comparison and analysis about photovoltaic and photoconductive 2D semiconductor photodetectors. Taking advantage of the 2D semiconductor van der Waals heterostructure, this work constructs a photovoltaic (PV) GeSe/MoS2 and a photoconductive (PC) GeSe/graphene photodetector, respectively. The PC GeSe/graphene photodetector achieves relatively higher photoresponsivity (R), where R can reach up to 104 AW−1. The PV GeSe/MoS2 photodetector, by contrast, obtains a faster photoresponse speed. More importantly, the photoresponse properties of the PV GeSe/MoS2 photodetector can remain constant under the reverse bias, due to the minority carrier conduction in its depletion region at this time. The different characteristics of the two type 2D photodetectors are explored in detail, which can play a guiding role in the construction of high-performance photodetectors.
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