NMOS逻辑
CMOS芯片
电源抑制比
电气工程
电压基准
晶体管
电压
过驱动电压
材料科学
阈值电压
温度系数
二极管
MOSFET
工艺角
补偿(心理学)
电子工程
光电子学
工程类
心理学
放大器
精神分析
作者
Fabián Olivera,Antonio Petraglia
出处
期刊:IEEE Transactions on Circuits and Systems Ii-express Briefs
[Institute of Electrical and Electronics Engineers]
日期:2020-10-01
卷期号:67 (10): 1690-1694
被引量:12
标识
DOI:10.1109/tcsii.2019.2943303
摘要
In this brief, a CMOS voltage reference based on mutual temperature compensation using NMOS transistors of the same threshold type is advanced. The technique consists in subtracting two voltages that present similar complementary-to-absolute-temperature (CTAT) behavior, which are appropriately generated from the same threshold-type NMOS transistors operating as diodes in different inversion levels. The proposed topology provides an adjustable voltage and avoids the use of start-up drivers. The circuit design was carried out in a 180 nm CMOS process. Experimental results verified the effectiveness of the presented technique, and produced a reference voltage of 500 mV. The circuit operates with a supply voltage ranging from 1.2 V to 1.8 V, consumes 4.7 μA at 27 °C, has a temperature coefficient (TC) of 22 ppm/°C from 0 °C to 100 °C, and presents a power supply rejection ratio (PSRR) of -42 dB.
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