高功率脉冲磁控溅射
溅射
溅射沉积
腔磁控管
材料科学
光电子学
物理气相沉积
等离子体
辉光放电
工程物理
薄膜
纳米技术
物理
核物理学
作者
Jón Tómas Guðmundsson,Daniel Lundin
出处
期刊:Elsevier eBooks
[Elsevier]
日期:2020-01-01
卷期号:: 1-48
被引量:9
标识
DOI:10.1016/b978-0-12-812454-3.00006-1
摘要
Plasma-based physical vapor deposition (PVD) methods have found widespread use in various industrial applications. In plasma-based PVD processes, the deposition species are either vaporized by thermal evaporation or by sputtering from a source (the cathode target) by ion bombardment. Initially, the dc glow discharge or the dc diode sputtering discharge was used as a sputter source followed by the magnetron sputtering technique, which was developed during the 1960s and 1970s. With the introduction of magnetron sputtering, the disadvantages of diode sputtering, such as poor deposition rate, were overcome as the operating pressure could be reduced while maintaining the energy of the sputtered species, often resulting in improved film properties. In this chapter we discuss the basics of the sputtering process, give an overview of the dc glow discharge, and review the basic physics relevant to the maintenance of the discharge and the sputter processes. Then we discuss the dc glow discharge and its role as a sputter source and how it evolves into the magnetron sputtering discharge. We also discuss various magnetron sputtering configurations in use for a wide range of applications both under laboratory and industrial arrangements. Finally, we introduce pulsed magnetron discharges including high power impulse magnetron sputtering (HiPIMS) discharges.
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