电化学发光
石墨氮化碳
材料科学
荧光
碳化
石墨
态密度
发光
带隙
纳米技术
氮化物
光电子学
密度泛函理论
化学物理
冷凝
碳纤维
宽禁带半导体
氮化碳
光致发光
光化学
氮化硼
碳量子点
电子结构
分析化学(期刊)
作者
Yajie Jiao,Rongjing Hu,Qian Wang,FengFu Fu,Lichan Chen,Yongqiang Dong,Zhenyu Lin
标识
DOI:10.1002/chem.202100731
摘要
Abstract The effects of defect states on the fluorescence (FL) and electrochemiluminescence (ECL) properties of graphite phase carbon nitride (g‐CN) are systematically investigated for the first time. The g‐CN nanosheets (CNNSs) obtained at different condensation temperatures are used as the study models. It can be found that all the CNNSs have two kinds of defect states, one is originated from the edge of CNNSs (labeled as CN‐defect) and the other is attributed to the partially carbonization regions (labeled as C‐defect). Both two kinds of defect states substantially affect the luminescent properties of CNNSs. Both the FL and ECL signals of CNNSs contain a band gap emission and two defect emissions. For the FL of CNNSs, decreasing the density of defect states can increase efficiently the FL quantum yield, while increasing the density of defect states can make the FL spectra red shift. For the ECL of CNNSs, increasing the density of CN‐defect states and decreasing the density of C‐defect states are greatly important to improve the ECL activity. This work provides a deep insight into the FL and ECL mechanisms of g‐CN, and is of significance in tuning the FL and ECL properties of g‐CN. Also, it will greatly promote the applications of CNNSs based on the FL and ECL properties.
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