邻接
蓝宝石
材料科学
光电子学
基质(水族馆)
高电子迁移率晶体管
各向异性
晶体管
宽禁带半导体
电子迁移率
方向(向量空间)
氮化镓
光学
复合材料
几何学
电气工程
化学
电压
物理
地质学
工程类
有机化学
海洋学
激光器
数学
图层(电子)
作者
Haochen Zhang,Yue Sun,Kang‐Il Song,Chong Xing,Lei Yang,Danhao Wang,Huabin Yu,Xueqiang Xiang,Nan Gao,Guangwei Xu,Haiding Sun,Shibing Long
摘要
In this work, the electrical characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) on vicinal c-plane sapphire substrates with different misoriented angles are investigated. As the angle increases from 0.2°, 1.0° to 4.0°, an enlarged width and height of surface step bunching as well as significantly enhanced electron mobility from 957, 1123 to 1246 cm2/V s were measured. As a result, a large boost in the maximum output current (IDmax) from ∼300 mA/mm (on a 0.2° substrate) to ∼650 mA/mm (on a 4.0° substrate) can be observed. Importantly, HEMTs on 1.0° and 4.0° substrates exhibit an obvious anisotropic electrical behavior: the IDmax along the [11-20] orientation is larger than that along the [10-10] orientation. Such a difference becomes more distinct as the misoriented angle increases, attributing to the lifted step height that would introduce a potential barrier for the electron transport along the [10-10] orientation. In short, this work demonstrates an effective approach toward the realization of high-performance HEMTs with anisotropic electrical behavior on a single device platform.
科研通智能强力驱动
Strongly Powered by AbleSci AI