兴奋剂
外延
材料科学
光电子学
工程物理
纳米技术
物理
图层(电子)
作者
Nidhin Kurian Kalarickal,Siddharth Rajan
出处
期刊:Semiconductors and Semimetals
日期:2021-01-01
卷期号:: 49-76
标识
DOI:10.1016/bs.semsem.2021.05.002
摘要
This chapter provides an overview of the background and current status of epitaxial growth, doping, and transport in alloys and heterostructures of (AlxGa(1 − x))2O3. Recent advances in the epitaxial growth of (AlxGa(1 − x))2O3 by molecular beam epitaxy and metalorganic chemical vapor deposition are reviewed. Recent work on impurity doping and carrier transport in thin films as well as modulation-doped heterostructures is discussed. Recent results on n-type doping in alloy thin films, as well as state-of-art mobility and 2-dimensional electron gas channels in modulation doped-structures are reviewed.
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