非阻塞I/O
吸附
开关设备
材料科学
兴奋剂
工作职能
化学工程
纳米技术
图层(电子)
化学
物理化学
物理
光电子学
有机化学
催化作用
工程类
量子力学
作者
Xiaosong Hu,Jiagui Tao,Yujie Liu,Lingna Xu,Liang Ran,Xianping Chen
出处
期刊:Vacuum
[Elsevier]
日期:2021-11-01
卷期号:193: 110506-110506
被引量:15
标识
DOI:10.1016/j.vacuum.2021.110506
摘要
Gas insulated switchgear (GIS) is an important equipment in the power transmission and distribution system, which commonly fills with SF 6 /N 2 insulating gas mixture. Due to the partial discharge in GIS, SF 6 gas is likely to ionize and react with impurities inside the GIS, and produces SO 2 , H 2 S, SO 2 F 2 , and SOF 2 characteristic gases. This work was devoted to detect the partial discharge by exploring new gas-sensing materials for characteristic gases detection. First, four possible modification sites of NiO on MoSe 2 surface were built and optimized, it was found that the B2 site modification was the most stable one. Then, the optimal adsorption structure was obtained by analyzing the adsorption structures of gases on NiO–MoSe 2 with different initial positions. Finally, the adsorption mechanism and gas-sensing characteristics were studied based on the density of state theory and molecular orbital theory. The results show that NiO doping greatly enhances the surface activity of MoSe 2 for gas adsorption. The order of adsorption ability is H 2 S > SO 2 > SOF 2 > N 2 > SO 2 F 2 , and the moderate adsorption energy indicates that NiO–MoSe 2 could be a suitable gas-sensing material, which lays a theoretical foundation for the design of NiO–MoSe 2 sensors. This research provides a new method to ensure the stability of GIS operation. • It is the first time to use NiO–MoSe 2 as a gas-sensing material for H 2 S, SO 2 , SO 2 F 2 , SOF 2 and N 2 . • Comprehensive analysis reveal that the adsorption effect is H 2 S > SO 2 > SOF 2 > N 2 > SO 2 F 2 . • This study lays a theoretical basis for developing NiO–MoSe 2 based gas sensor.
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