悬空债券
钝化
异质结
材料科学
非晶硅
重组
晶体硅
硅
光电子学
无定形固体
太阳能电池
透射电子显微镜
化学物理
分子物理学
纳米技术
结晶学
化学
生物化学
基因
图层(电子)
作者
S. Olibet,E. Vallat‐Sauvain,L. Fesquet,Christian Monachon,Aïcha Hessler‐Wyser,J. Damon-Lacoste,Stefaan De Wolf,Christophe Ballif
标识
DOI:10.1002/pssa.200982845
摘要
Abstract To study recombination at the amorphous/crystalline Si (a‐Si:H/c‐Si) heterointerface, the amphoteric nature of silicon (Si) dangling bonds is taken into account. Modeling interface recombination measured on various test structures provides insight into the microscopic passivation mechanisms, yielding an excellent interface defect density reduction by intrinsic a‐Si:H and tunable field‐effect passivation by doped layers. The potential of this model's applicability to recombination at other Si heterointerfaces is demonstrated. Solar cell properties of a‐Si:H/c‐Si heterojunctions are in good accordance with the microscopic interface properties revealed by modeling, that are, e.g., slight asymmetries in the neutral capture cross‐sections and band offsets. The importance of atomically abrupt interfaces and the difficulties to obtain them on pyramidally textured c‐Si is studied in combination with transmission electron microscopy.
科研通智能强力驱动
Strongly Powered by AbleSci AI