霍尔效应传感器
霍尔效应
薄膜
沉积(地质)
磁场
分子束外延
材料科学
光电子学
产量(工程)
工程物理
纳米技术
物理
电气工程
磁铁
冶金
工程类
外延
量子力学
生物
沉积物
古生物学
图层(电子)
标识
DOI:10.1016/s0022-0248(96)00924-4
摘要
Hall elements as mass production magnetic sensors are a new application area for thin film technology such as vacuum deposition and MBE. Highly sensitive InSb thin film Hall elements formed by vacuum deposition are often applied as magnetic field sensors for small DC brushless motors used in electronic equipment. InAs Hall elements developed and produced by MBE have high sensitivity and stability over a wide temperature range and have potential for the present and future applications required by many electronic systems. Here, we review the recent status of applications, production, and the good characteristics of InAs Hall elements for use as magnetic sensors. Our production MBE system has confirmed the feasibility of high yield, mass production of thin film InAs Hall elements.
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