材料科学
超级电容器
纳米孔
电极
纳米技术
GSM演进的增强数据速率
氢
光电子学
化学工程
电化学
物理化学
有机化学
计算机科学
电信
工程类
化学
作者
Yang Yang,Huilong Fei,Gedeng Ruan,Changsheng Xiang,James M. Tour
标识
DOI:10.1002/adma.201402847
摘要
A simple method to fabricate edge-oriented MoS2 films with sponge-like morphologies is demonstrated. They are directly fabricated through the reaction of sulfur vapor with anodically formed Mo oxide sponge-like films on flexible Mo substrates. The edge-oriented MoS2 film delivers excellent hydrogen evolution reaction (HER) activity with enhanced kinetics and long-term cycling stability. The material also has superior energy-storage performance when working as a flexible, all-solid-state supercapacitor device. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
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