材料科学
超级电容器
纳米孔
电极
纳米技术
GSM演进的增强数据速率
氢
光电子学
化学工程
电化学
物理化学
有机化学
电信
化学
计算机科学
工程类
作者
Yang Yang,Huilong Fei,Gedeng Ruan,Changsheng Xiang,James M. Tour
标识
DOI:10.1002/adma.201402847
摘要
A simple method to fabricate edge-oriented MoS2 films with sponge-like morphologies is demonstrated. They are directly fabricated through the reaction of sulfur vapor with anodically formed Mo oxide sponge-like films on flexible Mo substrates. The edge-oriented MoS2 film delivers excellent hydrogen evolution reaction (HER) activity with enhanced kinetics and long-term cycling stability. The material also has superior energy-storage performance when working as a flexible, all-solid-state supercapacitor device.
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