Laser activation and metallisation of insulators

材料科学 绝缘体(电) 缩进 激光器 激光烧蚀 辐照 烧蚀 辐射 复合材料 光学 物理 工程类 航空航天工程 核物理学
作者
G. A. Shafeev
出处
期刊:Quantum Electronics [Institute of Physics]
卷期号:27 (12): 1104-1110 被引量:18
标识
DOI:10.1070/qe1997v027n12abeh001106
摘要

An analysis is made of two-stage metallisation of insulator surfaces. Laser ablation of the surfaces of a number of insulators (activation stage) creates, on the irradiated surface, catalytic centres capable of reducing metals (deposition stage) in special solutions. Autocatalytic deposition spreads a metal over the whole ablated surface. A review is given of the experimental data on laser activation of Al2O3, SiC, diamond, ZrO2, and other insulators. Surface activation is observed in a wide range of laser radiation wavelengths and is retained for a long time, which makes it possible to deposit a number of metals (Cu, Ni, Pt, Pd, etc.) with a spatial resolution of the order of several microns. A model of the process is considered: according to this model, laser activation is the result of modification of a band gap of an insulator by ablation and appearance of a nonzero density of the electron states with energies close to the reduction potential of a metal. This in turn may be related to the formation of point defects (for example, F centres in Al2O3 and ZrO2) in an insulator or to band bending in the field of mechanical stresses that remain in the treated material after ablation. Data on the activation of insulators by mechanical indentation are in qualitative agreement with the proposed model.
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