Improvement of poly-silicon hole induced gate oxide failure by silicon rich oxidation

材料科学 氧化物 杀盐剂 蚀刻(微加工) 栅氧化层 光电子学 图层(电子) 等离子体 氧化硅 复合材料 电气工程 电压 冶金 晶体管 硅化物 氮化硅 工程类 物理 量子力学
作者
Summer F.C. Tseng,Wei-Ting Kary Chien,Bingchu Cai
出处
期刊:Microelectronics Reliability [Elsevier]
卷期号:43 (5): 713-724 被引量:6
标识
DOI:10.1016/s0026-2714(03)00059-3
摘要

This paper depicts the improvement of poly-silicon (poly-Si) holes induced failures during gate oxide integrity (GOI) voltage-ramp (V-Ramp) tests by replacing plasma enhanced oxidation with silicon rich oxidation (SRO), which is cap oxide on transfer gate serving as a hard mask to selectively form salicide. The SRO was found to be capable of completely removing salicide block etching induced poly-Si holes. With this SRO film deposited on poly-gate, the higher density silicon in cap oxide fills the interface of poly-Si grains and repairs the poly-Si film damaged by source–drain (S/D) implantation. The plasma-induced damage (PID) effect is observed and SRO can also suppress this PID effect and, thus, enhance GOI process margin. This is because PID may be enhanced during plasma poly-Si etching and S/D implantation, which induces the under-layer latent defects and deteriorates the adhesion between poly-grains and oxide. The SRO refraction index, which is 1.56 in this study with maximum silane (SiH4) in cap oxide furnace, was found to play an important role on eliminating poly-holes. In-line SEM inspections show that poly-Si holes happen at open area such as the GOI test patterns of large bulk area and of poly-Si edge. Therefore, in-line defect inspections, which usually check only cell area, fail to find poly-Si holes. Hence, the in-line GOI monitor is proposed to detect such “hidden” defects. In this paper, we found SRO can successfully eliminate poly-Si holes, which lead to GOI failures, with minimum productivity loss and negligible process costs. Since GOI monitor by V-Ramp test is implemented to detect such reliability failure, wafer-level reliability control is recommended to proactively monitor and improve GOI performance. In order to achieve more stringent reliability targets as technology marches to the 0.10 μm era, we introduce the concepts of build-in reliability to facilitate qualifications and to incorporate related/prior reliability concerns for developing advanced processes.
最长约 10秒,即可获得该文献文件

科研通智能强力驱动
Strongly Powered by AbleSci AI
更新
大幅提高文件上传限制,最高150M (2024-4-1)

科研通是完全免费的文献互助平台,具备全网最快的应助速度,最高的求助完成率。 对每一个文献求助,科研通都将尽心尽力,给求助人一个满意的交代。
实时播报
1秒前
海亦发布了新的文献求助10
2秒前
am完成签到,获得积分10
2秒前
巫雍发布了新的文献求助10
2秒前
scy完成签到,获得积分10
2秒前
3秒前
Yuhao完成签到,获得积分10
3秒前
充电宝应助路过采纳,获得10
4秒前
4秒前
无花果应助丢丢采纳,获得10
4秒前
香蕉觅云应助lmh采纳,获得10
6秒前
8秒前
yasu完成签到,获得积分10
9秒前
melody发布了新的文献求助10
10秒前
彭于彦祖应助珊珊采纳,获得30
10秒前
陶醉觅夏发布了新的文献求助10
11秒前
海亦完成签到,获得积分0
12秒前
Xv完成签到,获得积分10
14秒前
14秒前
15秒前
15秒前
16秒前
16秒前
16秒前
111完成签到 ,获得积分10
17秒前
18秒前
18秒前
GD完成签到,获得积分10
20秒前
爆米花应助绿袖子采纳,获得10
20秒前
20秒前
21秒前
ee发布了新的文献求助10
21秒前
Yiers发布了新的文献求助10
21秒前
21秒前
桐桐应助叽里咕卢采纳,获得10
21秒前
陶醉觅夏发布了新的文献求助10
22秒前
22秒前
ugk发布了新的文献求助10
23秒前
Godkai完成签到,获得积分10
23秒前
357发布了新的文献求助10
24秒前
高分求助中
歯科矯正学 第7版(或第5版) 1004
SIS-ISO/IEC TS 27100:2024 Information technology — Cybersecurity — Overview and concepts (ISO/IEC TS 27100:2020, IDT)(Swedish Standard) 1000
Smart but Scattered: The Revolutionary Executive Skills Approach to Helping Kids Reach Their Potential (第二版) 1000
Semiconductor Process Reliability in Practice 720
GROUP-THEORY AND POLARIZATION ALGEBRA 500
Mesopotamian divination texts : conversing with the gods : sources from the first millennium BCE 500
Days of Transition. The Parsi Death Rituals(2011) 500
热门求助领域 (近24小时)
化学 医学 生物 材料科学 工程类 有机化学 生物化学 物理 内科学 纳米技术 计算机科学 化学工程 复合材料 基因 遗传学 催化作用 物理化学 免疫学 量子力学 细胞生物学
热门帖子
关注 科研通微信公众号,转发送积分 3231417
求助须知:如何正确求助?哪些是违规求助? 2878528
关于积分的说明 8206536
捐赠科研通 2545962
什么是DOI,文献DOI怎么找? 1375570
科研通“疑难数据库(出版商)”最低求助积分说明 647437
邀请新用户注册赠送积分活动 622521