电子迁移率
材料科学
光电子学
宽禁带半导体
饱和速度
晶体管
感应高电子迁移率晶体管
带隙
场效应晶体管
射频功率放大器
频道(广播)
作者
Hansheng Ye,Mikhail Gaevski,Grigory Simin,Asif Khan,Patrick Fay
摘要
Ultra-wide bandgap AlGaN has attracted recent attention as a promising channel material for next-generation high electron mobility transistors (HEMTs) for RF power due to its high critical field, excellent transport properties, and potential for operation in extreme environments. However, the effects of temperature on the transport properties are not fully understood. Here, Al0.62Ga0.38N/Al0.45Ga0.55N HEMTs have been fabricated and characterized up to 150 °C at DC and RF to evaluate the effect of temperature on electron mobility and carrier velocity. Measured results indicate that both mobility and carrier velocity exhibit modest dependence on temperature, suggesting that AlGaN channel HEMTs are promising for future RF power applications.
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