沉降时间
电容器
降压式变换器
死时间
氮化镓
电容
门驱动器
电压
电感器
计算机科学
电气工程
电子工程
控制理论(社会学)
材料科学
工程类
物理
控制(管理)
图层(电子)
阶跃响应
复合材料
人工智能
控制工程
量子力学
电极
作者
Ching‐Jan Chen,Pin-Ying Wang,Sheng-Teng Li,Yen‐Ming Chen,Yu-Cheng Chang
出处
期刊:IEEE Transactions on Power Electronics
[Institute of Electrical and Electronics Engineers]
日期:2022-03-16
卷期号:37 (8): 9503-9514
被引量:12
标识
DOI:10.1109/tpel.2022.3159717
摘要
This article proposes a high-frequency integrated gate driver for gallium nitride (GaN) synchronous buck converter. The proposed adaptive bang-bang dead-time control minimizes dead-time at any load condition. Thus, it mitigates the excessive power loss caused by GaN device reverse conduction in high-frequency applications. The proposed charge sharing bootstrap circuit ensures sufficient gate overdrive voltage with reduced chip area. Fabricated in a TSMC 0.25- μ m BCD process, the driver integrated circuit enabled GaN-based buck converter to operate at 10 MHz switching frequency with minimal dead-time to as low as 0.4 ns under light load and heavy load conditions. Compared with fixed dead-time control, the proposed work improves around 5% efficiency under heavy load condition. The fully integrated bootstrap circuit with 100 and 60 pF (HV) capacitor obtained the lower than 0.6 V driving voltage drop with only 45% capacitance and around half of the voltage drop compared with a conventional bootstrap circuit. Besides, the proposed driver successfully tackled the parasitic ringing and dead-time overcharging issues in the GaN converter.
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